DDR5

SK hynix DDR5 24Gb Component

Non-binary 24 Gb DDR5 die enabling 48 GB and 96 GB module capacities

Mass ProductionNon-binary
SK hynix DDR5 24Gb Component, placeholder product image. Component-level DRAM packages on a printed circuit board, macro view.

SK hynix · FBGA component

24 Gb DDR5 component on SK hynix's 1b-nm node, the die behind 48 GB and 96 GB non-binary module capacities.

Interface
DDR5
Form factor
FBGA component
Capacities
24 Gb
01 — Overview

In the DRAM Components portfolio

SK hynix's 24 Gb DDR5 die introduced non-binary density scaling to volume DRAM production. Built on the 1b-nm node, it enables 48 GB and 96 GB modules from monolithic die, giving system designers a capacity step between binary tiers without TSV stacking cost.

The component ships in x8 organization at speed bins to 6400 MT/s and supports the full DDR5 feature set including on-die ECC. It is the basis of SK hynix's 96 GB RDIMM line and is available to OEMs building high-density custom modules.

02 — Specifications

Verified specification

Figures as published by SK hynix. Availability and firmware options are confirmed at quotation.

InterfaceDDR5
Density24 Gb
Organizationx8
Data RateUp to 6400 MT/s
Voltage1.1 V
Process1b-nm
PackageFBGA
FeaturesOn-die ECC
03 — Related Products

Considered alongside

SK hynix · DDR5 RDIMMMass Production

SK hynix DDR5 RDIMM 96GB

96 GB DDR5 RDIMM using 24 Gb monolithic dies, raising per-socket capacity by 50% over 64 GB modules at up to 6400 MT/s.

High Density48 GB96 GB