UFS
Samsung UFS 4.0
Flagship mobile storage at 4,200 MB/s sequential read in a 1 TB package
Samsung · UFS BGA · Image: samsung.com
UFS 4.0 managed NAND with up to 4,200 MB/s reads and double the power efficiency of UFS 3.1, in capacities to 1 TB.
- Interface
- UFS 4.0
- Form factor
- UFS BGA
- Capacities
- 256 GB512 GB1 TB
In the Mobile & Embedded portfolio
Samsung UFS 4.0 pairs seventh-generation V-NAND with a high-speed controller to reach about 4,200 MB/s sequential read and 2,800 MB/s write — roughly double UFS 3.1 throughput — at significantly better power efficiency per megabyte transferred.
The part ships in flagship smartphones and is qualified for automotive and XR designs requiring high sustained bandwidth. Capacities run 256 GB to 1 TB in the standard 11.5 x 13 mm BGA, with WriteBooster and deep-sleep states supporting battery-sensitive duty cycles.
Verified specification
Figures as published by Samsung. Availability and firmware options are confirmed at quotation.
| Interface | UFS 4.0 (MIPI M-PHY 5.0, 2 lanes) |
|---|---|
| Form Factor | UFS BGA (11.5 x 13 mm) |
| Capacities | 256 GB, 512 GB, 1 TB |
| Sequential Read | Up to 4,200 MB/s |
| Sequential Write | Up to 2,800 MB/s |
| NAND Type | Samsung V-NAND TLC |
| Power | ~2x MB/s per mA vs UFS 3.1 |
| Operating Temp | -25°C to 85°C |
