LPDDR

Samsung LPDDR5X

High-speed LPDDR5X scaling to 10.7 Gbps for mobile and edge AI platforms

Mass Production10.7 Gbps
Samsung LPDDR5X — FBGA / PoP

Samsung · FBGA / PoP · Image: samsung.com

Samsung LPDDR5X in 12 nm-class process, shipping at 8533 Mbps with 10.7 Gbps grades sampling for AI-era devices.

Interface
LPDDR5X
Form factor
FBGA / PoP
Capacities
12 GB16 GB24 GB32 GB
01 — Overview

In the DRAM Components portfolio

Samsung LPDDR5X ships in volume at 8533 Mbps with next grades sampling at up to 10.7 Gbps per pin, built on a 12 nm-class DRAM process. Package capacities reach 32 GB, positioning the part for AI smartphones and LPDDR-based notebook and server designs.

Samsung emphasizes thermal headroom and power efficiency: improved thermal resistance in thin packages supports sustained camera and gaming workloads, while low-voltage rails and refined self-refresh reduce standby drain. Automotive-qualified variants extend the line into IVI and ADAS domains.

02 — Specifications

Verified specification

Figures as published by Samsung. Availability and firmware options are confirmed at quotation.

InterfaceLPDDR5X
Data Rate8533 Mbps (10.7 Gbps sampling)
Package Capacities12 GB, 16 GB, 24 GB, 32 GB
Process12 nm-class
Voltage1.05/0.9/0.5 V rails
PackagePOP / discrete FBGA
Operating Temp-25°C to 85°C (auto grades available)
03 — Related Products

Considered alongside

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SK hynix LPDDR5X

LPDDR5X at 8533 Mbps per pin in packages up to 16 GB, powering flagship smartphones and edge AI devices.

8533 Mbps8 GB12 GB16 GB
Samsung · LPDDRMass Production

Samsung LPDDR4X

LPDDR4X at 4266 Mbps with automotive temperature grades, the volume choice for IVI, telematics, and mid-range devices.

Automotive2 GB4 GB6 GB8 GB
Samsung · UFSMass Production

Samsung UFS 4.0

UFS 4.0 managed NAND with up to 4,200 MB/s reads and double the power efficiency of UFS 3.1, in capacities to 1 TB.

Flagship256 GB512 GB1 TB